? 2003 ixys all rights reserved ds99002(01/03) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c40a i dm t c = 25 c, pulse width limited by t jm 160 a i ar t c = 25 c40a e ar t c = 25 c 50mj e as 2.5 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.14 ? pulse test, t 300 s, duty cycle d 2 % to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets q-class to-268 (d3) ( ixft) (tab) g s v dss = 500 v i d25 = 40 a r ds(on) = 0.14 ? ? ? ? ? t rr 250 ns ixfh 40n50q ixft 40n50q (tab) advanced technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 40n50q ixft 40n50q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 22 35 s c iss 3800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 660 pf c rss 180 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 ns t d(off) r g = 2.0 ? (external), 56 n s t f 14 ns q g(on) 130 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 nc q gd 58 nc r thjc 0.25 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 40 a i sm repetitive; pulse width limited by t jm 160 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = 25a, -di/dt = 100 a/ s, v r = 100 v 1.0 c i rm 10 a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
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